摘要作为先进火工品的代表，半导体桥(简称SCB）具有高安全、高可靠性、高同步性、高工艺一致性、低发火能量以及能与数字逻辑电路组合等一系列优异性能。虽然其本身具有一定的抗静电能力，但是随着科学技术的发展和电磁环境的日益恶劣，对其抗电磁能力提出了更高要求，因此提高半导体桥的抗静电性能具有十分重要的意义。
通常情况下，火工品抗静电的方式主要有三种：堵、泄、堵泄结合。但是这些方法需要增加元件和工序，带来了不必要的的成本消耗并降低了火工品的可靠性，因此本论文通过改变半导体桥的桥形状来提高其抗静电性能，这样既简单有效，又能达到节约成本的目的。
本实验的主要工作是通过设计新的半导体桥桥形状来改善典型桥在V型尖角处易受静电损伤的不足。设计出了三种新的半导体桥桥型，通过对比试验，测试其性能相对于典型桥是否有所改善，主要是考察其静电冲击后的电阻和爆发时间是否变化。通过对比，三种新桥型中，有一种（B型）的性能相对于典型桥有了明显的改良，其他两种则没有改良，最终得到了改良后的半导体桥桥型。
关键词 半导体桥 火工品 抗静电 电阻 爆发时间
毕业设计说明书（论文）外文摘要
Title The research of the semiconductor bridge strengthening anti-electromagnetic technology
Abstract
As a representative of Advanced Pyrotechnics, the semiconductor bridge (SCB) with high security, high reliability, synchronization, high process consistency, low ignition energy, and has a series of excellent performance in combination with digital logic circuits. Although it has some antistatic ability, but with the development of science and technology and the increasingly harsh electromagnetic environment,its ability to put a higher resistance to electromagnetic requirements,thereby increasing significance antistatic properties of semiconductor bridge is of great importance.
Typically,There are three main ways for EED to antistatic: blocking, vent, vent-blocking binding. However, these methods need to increase the components and processes, bringing the cost of unnecessary consumption and reduce the reliability of EED, so this paper to improve its anti-static properties by changing the shape of the semiconductor bridge’s bridge, it both simple and effective,and it can saving the cost,too.
The main work of this experiment was to design new shape of semiconductor bridge’s bridge to improve the typical V-shaped corners of the bridge in injury susceptible to static electricity shortage. Designed three new shape of semiconductor bridge’s bridge, through comparison test, test its performance relative to typical bridge is improved or not, mainly investigate its static shock resistance and after the outbreak of the time is changed or not. By contrast, the three types of the new bridge, B-type with respect to the typical performance of the bridge has been significantly improved, the other two are not improved, the semiconductor bridge finally obtained after the bridge improved.
Keywords semiconductor bridge Pyrotechnics antistatic resistance burst time
目 次
1 绪论 1
1.1 课题背景 1
1.2 半导体桥简介 1
1.3 国内外关于半导体桥抗电磁的现状研究 3
1.4 论文的总体设计思路及主要的研究工作 6
2 半导体桥的设计与制作工艺 8
2.1 半导体桥结构的选取 8
2.2 半导体桥基片材料和掺杂浓度 8
2.3 半导体桥尺寸的确定 8
2.4 半导体桥形状的设计 9 半导体桥抗电磁加固技术研究:http://www.751com.cn/huaxue/lunwen_10909.html