摘要在现代雷达通信技术中，我们都需要高稳定度的频率源来保证载波信号的质量。而高稳定的频率源大多以低相位噪声的参考源为基础。
    本文主要的研究课题是关于8.5GHz双极型晶体管振荡器的设计，课题要求采用英飞凌BFP640设计电路并通过Agilent公司的Advanced Design System（ADS）实现仿真模拟。在文中，首先阐述了晶体振荡器的发展和相关工作原理，在之后便是针对课题的电路分析以及一步步的推进设计。首先对于所选用的晶体管进行K值计算，根据仿真结果对其进行处理并选择相应的电路结构。然后，设计直流偏置电路，以使得BJT管处在所选取的直流偏置点，为了保证了之后所用到的S参数的确定性。接着是对于振荡器谐振部分的设计，通过仿真调整选取最佳的接入元器件。选择π型电路的变形电路网络来作为输出电路的基本设计方案，设计相关接入元器件使输出功率最大。最后将整个振荡器电路组合起来。通过最终在ADS软件中实现电路的仿真模拟，所获得的仿真结果为在中心频率8.415GHz处，取得最大输出功率为8.224dBm；在600kHz带宽内，偏离中心频率100kHz时的相位噪声为-86.844dBc，高于课题的要求，未能成功实现。25214
 关键词  8.5GHz双极型晶体管振荡器  BFP640  ADS   仿真模拟
毕业论文设计说明书外文摘要
Title 8.5 GHz bipolar transistor  Oscillator Design                        
Abstract
In the modern radar and communication technologies, we all need high stability frequency source to guarantee the quality of carrier signal. And high stable frequency source is mostly based on the reference source of low phase noise.
In this paper, the main research topic is about 8.5 GHz bipolar transistor oscillator Design, project require the use of infineon BFP640 Design circuit and by Agilent company's Advanced Design System (ADS) to realize the simulation. In the article, first of all, this paper expounds the development and the related principle of crystal oscillator, after it is in view of the subject circuit analysis and advance step by step to design. First selected transistors for the calculation of K value according to the results of simulation on the process and select the corresponding circuit structure. Then, the design of dc bias circuit, in order to make the dc bias of the BJT tube in the selected, in order to ensure the after of S parameters used in certainty. Then to the design of the oscillator resonant part, adjustment to choose the best access components through simulation. Deformation of PI type circuit network as a basic for output circuit design, design related access components to maximize output power. Finally the whole oscillator circuit together. Through the final circuits in ADS software simulation, the simulation results obtained for the center frequency 8.415 GHz, maximum output power of 8.224 dBm; Within the 600 KHZ bandwidth, deviating from the center frequency of 100 KHZ phase noise is the 86.844 dBc, above subject’s requirements, failed to achieve the requirement.
Keywords  8.5 GHz bipolar transistor oscillator design  BFP640  ADS   simulation
目   次
1  引言（或绪论）1
1.1振荡器的发展历程1
1.2 晶体振荡器的工作原理3
1.3 课题设计内容及相关实现形式5
2  振荡器电路结构设计 7
2.1 振荡器相关电路结构的分类7
2.2稳定系数的计算及电路结构的选择10
3  直流偏置电路的设计14
4  谐振器部分的优化设计15
4.1 谐振器的工作原理15
4.2 基极开路线的设计15
5  输出匹配电路的设计17
5.1 输出匹配常用网络结构17 8.5GHz双极型晶体管振荡器的设计+ADS仿真:http://www.751com.cn/tongxin/lunwen_18877.html