Silvaco TCAD探测材料吸收对探测器性能的影响

摘要硅光探测器在光电探测领域具有重大作用，被应用于大量探测器前端。但由于硅材料本身的限制，即禁带宽度较大且为间隙带隙结构，其对可见光部分的波段进行吸收时反射率较大，很难做到对于可见光的高效吸收。因而研制在在可见光波段内具有较高响应度新型光电探测器便成了当务之急。在此初衷下，黑硅材料应运而生，其具有宽光谱吸收特性，已成为最重要的硅基光电材料之一，在光电探测、光纤通信、微电子及太阳能发电等领域具有重要的价值。本论文利用黑硅的表面微结构特征和元素掺杂改性作用，在理论计算与结构设计的基础上，利用仿真软件Silvaco TCAD对基于黑硅的新型PIN光电探测器进行了仿真研究，考查了其光电响应特性，并将仿真优化结果用于指导实际器件的加工当中。49682

毕业论文关键词：黑硅， Silvaco TCAD， PIN光电探测器，仿真

毕业设计说明书外文摘要

Title The influence of photoelectric material absorption on performance of the photoelectric detector

Abstract

The silicon-base photoelectric detector has a important position in the field of optoelectronic applications, being applied in the front end of a large number of detectors. But because of the limits of silicon itself, which has a broad forbidden band width and a gap band gap structure, the silicon only could absorb the power of the visible light effectively and is hard to be used to make a light receiver of 1.3μm and 1.55μm. So study and create a new type photoelectric detector with the ability to detect the light in the near infrared wave band is becoming a task of top priority. On this purpose, the black-silicon material emerges as the times require. Because its broad optoelectronic absorption of optical spectrum, make it become one of the important silicon-base photoelectric material, and it has a very important value in the field of photoelectric detection, microelectronics , optical fiber communication and solar power, etc. Using the effect of surface microstructure of the black-silicon and the effect of element doping modification, and on the basis of theoretical calculation and structural design, we carried out the simulation research on new PIN photoelectric detector based on the black-silicon is by using the simulation software Silvaco TACD. We studied its photoelectric response characteristic, and make the simulation results guide the processing of the actual devices.

Keywords black-silicon, Silvaco TACD, PIN photoelectric detector, simulation

1 绪论 1

1.1 “黑硅”简介2

1.2 PIN光电二极管探测器…2

1.3本文研究内容和研究路线8

2 硅PIN光电探测器的仿真研究9

2.1 Silvaco TCAD软件介绍9

2.2硅PIN光电探测器模型建立及参数设定…10

2.3硅PIN光电探测器的光电特性仿真…11

2.4 本章小结14

3 黑硅PIN光电探测器模型建立与仿真16

3.1 黑硅PIN光电探测器的高吸收率近似16

3.2 黑硅PIN光电探测器的光电响应仿真…16

3.3 考虑黑硅表面反射系数随波长变化情况下仿真18

3.4 仿真结果讨论20

4 结论与展望…22

致谢 23

参考文献24

1 绪论

光电子技术是一门光子技术与电子技术结合而成的学科，其涵盖内容十分广阔。从最前端利用光电传感材料的光电效应来进行光电信号转换开始，经历转换后信号的滤波、去噪、放大、传输、中继、储存，最后到达后端[1]——送处理系统进行信号处理，提取有用信号，去除无用信号。如果是模拟系统，那可以直接利用模拟电路进行模拟信息处理。若系统采用的是数字的，那就还要再进行模数转换，变成数字信号后，送入数字处理器处理，最终得到输出结果。 Silvaco TCAD探测材料吸收对探测器性能的影响:http://www.751com.cn/wuli/lunwen_52742.html