Al/CuO肖特基结换能元芯片设计与制备方法研究

摘要Al/CuO复合薄膜是一种具有氧化还原反应性能的薄膜材料，由多层Al薄膜和多层CuO薄膜相互叠加而成。前期研究发现肖特基结构的Al/CuO复合薄膜在电爆过程中存在发火能量阈值，具有非线性换能的特点。分析认为其原因是在每一层Al膜和CuO膜的接触界面均形成了面接触肖特基结。在电激励能量大于发火阈值时，Al/CuO复合薄膜发生电爆炸反应，不仅产生焦耳热，还可以激发Al膜和CuO膜之间的氧化还原反应，释放出反应热，使反应生成物形成高温等离子体。本课题以此实验现象为切入点，使用霍尔效应仪对CuO薄膜的导电类型、载流子浓度、电阻率和霍尔迁移率进行测量。设计并制备Al/CuO肖特基结换能元芯片，在此基础上，联合使用击穿电压仪和储能电爆仪对所制备Al/CuO肖特基结换能元芯片进行电性能表征，得出其击穿电压为1.5V，不同桥区面积的换能元芯片100％发火电压为90V，且发火方式一样。25480
关键词：Al/CuO复合薄膜肖特基结芯片电性能表征
毕业论文设计说明书外文摘要
Title    Design and Preparation methods of Al/CuO Schottky Structure Transducer Element Chip
Abstract
Al/CuO multilayer films are composed of alternately deposited Al and CuO films, which can maintain oxidation-reduction reaction under specific conditions. During previous investigation, it is found that threshold of electrical stimulation exists for Schottky Barrier structured Al/CuO multilayer films, and the reasons can be related to the series surface contact Schottky junctions formed between inpidual Al and CuO films. Once initiated by electrical stimulation, Al/CuO multilayer films explode, which releases not only Joule heat, but also chemical reaction heat between CuO and Al, resulting in the generation of high temperature plasma. Based on these experimental results, Hall effect device was applied to test the conductive type, carrier concentration, electrical resistivity and Hall mobility measurements of the CuO film. The Al / CuO transducer element chip with Schottky structure was designed and fabricated and then characterized electrically by the breakdown voltage meter and the energy storage electro-explosive device. The results showed the breakdown voltage was 1.5V. Moreover, different area of bridge transducer element chip was ignited 100% at the same ignition method and the ignition voltage was 90V.
Keyword: Al/CuO multilayer films , Schottky structure, Chip, Electrical characterization
目次
1绪论    1
1.1Al/CuO薄膜的概念    1
1.2 国内外研究现状    2
1.3 本论文研究内容    5
2 Al/CuO肖特基结换能元芯片的设计与制备    6
2.1 CuO薄膜的半导体性能测试    6
2.2 Al/CuO肖特基结换能元芯片的设计    7
2.3 Al/CuO肖特基结换能元芯片的制备    8
2.3.1 光刻    9
2.3.2 磁控溅射    12
3 Al/CuO肖特基结换能元芯片电性能表征    17
3.1 击穿电压测试    17
3.2 电爆性能测试    18
4结论    22
5致谢    23
6参考文献24
1 绪论
1.1 Al/CuO薄膜的概念
Al/CuO复合薄膜是一种由多层Al薄膜和多层CuO薄膜相互叠加而成新结构形式的含能复合薄膜，理论能量密度为4kJ/g、21kJ/cm3。在外界能量激发下，Al/CuO复合薄膜中的Al和CuO会发生氧化还原反应释放出化学反应热，产生的热量可以使反应区以特定的速度发生自蔓燃烧反应，具有反应瞬间完成、放热量大等特点。图1.1是含能复合薄膜的结构和自蔓燃烧反应示意图。 Al/CuO肖特基结换能元芯片设计与制备方法研究:http://www.751com.cn/huaxue/lunwen_19303.html