Utot/
A
Utot/
0 gives the wavelength and amplitude inEqs. 3 and 4.We thank J.Hanlon of the Beckman Institute for the images of Fig. 1 andT. Banks and K. Colravy for help with processing using facilities at theFrederick Seitz Materials Research Laboratory. This material is basedon work supported by the National Science Foundation under GrantDMI-0328162 and the U.S. Department of Energy, Division ofMaterialsSciences, under Award DEFG02-91ER45439, through the FrederickSeitz Materials Research Laboratory and Center for Microanalysis ofMaterials at the University of Illinois at Urbana–Champaign. H.J.acknowledges the support from National Science Foundation GrantCMMI-0700440, and Y.H. acknowledges support from the NationalNatural Science Foundation of China.1. Harrison C, Stafford CM, Zhang WH, Karim A (2004) Appl Phys Lett 85:4016–4018.2. Huang R (2005) J Mech Phys Solids 53:63–89.3. Huang R, Im SH (2006) Phys Rev E 74:12.4. Huang R, Suo Z (2002) J Appl Phys 91:1135–1142.5. Huang R, Suo Z (2002) Int J Solids Struct 39:1791–1802.6. Huang R, Yin H, Liang J, Sturm JC, Hobart KD, Suo Z (2002) Acta Mech Sin 18:441–456.7. Huang ZY, Hong W, Suo Z (2004) Phys Rev E 70:4.8. Huang ZY, Hong W, Suo Z (2005) J Mech Phys Solids 53:2101–2118.9. Im SH, Huang R (2004) Acta Mater 52:3707–3719.10. Khang DY, Jiang HQ, Huang Y, Rogers JA (2006) Science 311:208–212.11. Lacour SP, Jones J, Suo Z, Wagner S (2004) IEEE Electron Device Lett 25:179–181.12. Lacour SP, Jones J, Wagner S, Li T, Suo ZG (2005) Proc IEEE 93:1459–1467.13. Lacour SP, Wagner S, Huang ZY, Suo Z (2003) Appl Phys Lett 82:2404–2406.14. Lacour SP, Wagner S, Narayan RJ, Li T, Suo ZG (2006) J Appl Phys 100:014913.15. Stafford CM, Guo S, Harrison C, Chiang MYM (2005) Rev Sci Instrum 76:062207.16. Stafford CM, Harrison C, Beers KL, Karim A, Amis EJ, Vanlandingham MR, Kim HC,Volksen W, Miller RD, Simonyi EE (2004) Nat Mater 3:545–550.17. Stafford CM, Vogt BD, Harrison C, Julthongpiput D, Huang R (2006) Macromolecules39:5095–5099.18. Bowden N, Brittain S, Evans AG, Hutchinson JW, Whitesides GM (1998) Nature 393:146–149.19. Wagner S, Lacour SP, Jones J, Hsu PHI, Sturm JC, Li T, Suo ZG (2004) Physica E25:326–334.20. Fu YQ, Sanjabi S, Barber ZH, Clyne TW, Huang WM, Cai M, Luo JK, Flewitt AJ, MilneWI (2006) Appl Phys Lett 89:171922.21. Efimenko K, Rackaitis M, Manias E, Vaziri A, Mahadevan L, Genzer J (2005) Nat Mater4:293–297.22. Harris AK, Wild P, Stopak D (1980) Science 208:177–179.23. Teixeira AI, Abrams GA, Bertics PJ,Murphy CJ, Nealey PF (2003) J Cell Sci 116:1881–1892.24. Jiang XY, Takayama S, Qian XP, Ostuni E, Wu HK, Bowden N, LeDuc P, Ingber DE,Whitesides GM (2002) Langmuir 18:3273–3280.25. Wilder EA, Guo S, Lin-Gibson S, Fasolka MJ, Stafford CM (2006) Macromolecules39:4138–4143.26. Bowden N, Huck WTS, Paul KE, Whitesides GM (1999) Appl Phys Lett 75:2557–2559.27. Huck WTS, Bowden N, Onck P, Pardoen T, Hutchinson JW, Whitesides GM (2000)Langmuir 16:3497–3501.28. Sharp JS, Jones RAL (2002) Adv Mater 14:799–802.29. Yoo PJ, Suh KY, Park SY, Lee HH (2002) Adv Mater 14:1383–1387.30. SchmidH,WolfH, Allenspach R, RielH, Karg S,Michel B,Delamarche E (2003) Adv FunctMater 13:145–153.31. Moon MW, Lee SH, Sun JY, Oh KH, Vaziri A, Hutchinson JW (2007) Proc Natl Acad SciUSA 104:1130–1133.32. Volynskii AL, Bazhenov S, Lebedeva OV, Bakeev NF (2000) J Mater Sci 35:547–554.33. Lee KJ, Motala MJ, Meitl MA, Childs WR, Menard E, Shim AK, Rogers JA, Nuzzo RG(2005) Adv Mater 17:2332–2336.34. Sun YG, Graff RA, Strano MS, Rogers JA (2005) Small 1:1052–1057.35. Sun YG, Kim S, Adesida I, Rogers JA (2005) Appl Phys Lett 87:083501.36. Sun YG, Rogers JA (2004) Nano Lett 4:1953–1959.37. Crawford GP (2005) Flexible Flat Panel Display Technology (Wiley, New York).38. Jin HC, Abelson JR, Erhardt MK, Nuzzo RG (2004) J Vac Sci Technol B 22:2548–2551.39. Lumelsky V, Shur MS, Wagner S (2001) IEEE Sensors J 1:41–51.40. Someya T, Sekitani T, Iba S, Kato Y, Kawaguchi H, Sakurai T (2004) Proc Natl Acad SciUSA 101:9966–9970.41. Nathan A, Park B, Sazonov A, Tao S, Chan I, Servati P, Karim K, Charania T, StriakhilevD, Ma Q, et al. (2000) Microelectron J 31:883–891.42. Childs WR, Nuzzo RG (2002) J Am Chem Soc 124:13583–13596.43. Goodier JN, Neou IM (1951) J Aeronaut Sci 18:649–657.44. AllenHG(1969)Analysis andDesign of Structural Sandwich Panels (Pergamon, Tarrytown,NY).45. Im SH, Huang R (2005) J Appl Mech Trans ASME 72:955–961.46. Chen X, Hutchinson JW (2004) J Appl Mech Trans ASME 71:597–603.47. Groenewold J (2001) Physica A 298:32–45.48. Information Service in Physics, Electrotechnology, Computers, and Control (1988) Prop-erties of Silicon (Institution of Electrical Engineers, New York).49. Sun Y, Choi WM, Jiang H, Huang YY, Rogers JA (2006) Nat Nanotechnol 1:201–207.50. Choi KM, Rogers JA (2003) J Am Chem Soc 125:4060–4061.51. Virwani K, Malshe A, Schmidt W, Sood D (2003) Smart Mater Struct 12:1028–1032.52. Timoshenko S, Gere J (1961) Theory of Elastic Stability (McGraw–Hill, New York).53. Symon K (1971) Mechanics (Addison–Wesley, Reading, MA).