摘要透明导电薄膜是一种既能导电又在可见光范围内具有高透明率的一种薄膜，主要有金属膜系、氧化物膜系、高分子膜系、复合膜系等。金属膜系导电性能好，但是透明率差。半导体薄膜系列刚好相反，导电性差，透明率高。在当今电子技术迅猛发展的条件下，透明导电膜作为支撑起一部分器件的核心材料，越来越受到研究者们的广泛关注。本文主要研究的是Mg、Be共掺杂的ZnO材料，属于半导体薄膜，有着无毒、价格低、禁带宽度大、对可见光的透射率超过90%等优良性能。
本文采用液相分解法制备BeMgZnO胶体，并使用XRD等手段表征其合金化程度，判断ZnO中掺杂Mg、Be的最大掺杂比；同时使用UV-Vis等手段表征其对紫外光的吸收率，从而找到吸收最小波长，计算出禁带宽度。最终对不同掺杂的材料进行分析，探求出不同掺杂率如何影响ZnO材料的性能。22681
关键词  氧化锌纳米晶 透明导电膜 Be、Mg共掺杂 合金化 禁带宽度
毕业设计说明书（毕业论文）外文摘要
Title   The Inprovement of Hybrid Assembly Properties                    
 of Nanocrystalline Transparent Conductive Film                                  
Abacacract
Transparent conductive films is kind of the material having both high conductivity and rate of transparency in the visible light range , including metal film , an oxide -based film , compound -based polymer film . Metal Film has favorable conductive properties, but the rate of poor transparency . Semiconductor films is just the opposite , poor electrical conductivity but , high transparency . Under the conditions of today's rapid development of electronic technology , the transparent conductive film as a support material from the core part of the device , attracting more and more researchers' attention. This paper studies the Mg 、 Be co-doped ZnO material , which is a semiconductor thin film , has  excellent performance , such as non-toxic, low price, large band gap , visible light transmittance of more than 90%.
In this article , BeMgZnO colloids was prepared in liquid decomposition , and we use XRD to characterize the degree of alloying determine Mg, Be -doped than the maximum doped ZnO ; while using UV-Vis to analysis absorption rate of UV to find the minimal absorption wavelength ,and then calculated the band gap . Ultimately different doping materials were analysised , to explore how different doped rates affect the performance of ZnO materials ..
Keywords  Zinc oxide nanocrystals、Transparent conductive film、Be、M、co-doped、Alloying、Bandgap
目   次
1    引言  1
1.1    ZnO的基本性质  1
1.2    纳米尺度的ZnO材料  3
1.3    ZnO材料的应用  4
1.4    纳米材料的应用  5
1.5    本论文的研究内容与意义  6
2    实验方法与原理  6
2.1    Be、Mg共掺杂ZnO纳米晶的制备  6
2.2    纳米晶胶体的表征  10
3    实验结果与分析  13
3.1    Mg掺杂ZnO的合金化分析  13
3.2    Mg掺杂ZnO的禁带宽度  17
3.3    Be掺杂的影响  18
结论     25
致谢     26
参考文献  27
1  引言（或绪论）
随着当今电子技术地不断发展，各行各业的人们对于高品质电子设备的要求也越来越迫切。作为一种特殊的材料，透明导电薄膜现在收到了极大的重视。由于其有着良好的光学特性（对于可见光有接近100%的透过率）以及电学特性（电阻率越在10^-4数量级）。“透明”与“导电”这两种性能在同一材料上得已实现，使其有了相当广泛的应用领域。 纳米晶透明导电膜的杂化组装性能提高:http://www.751com.cn/cailiao/lunwen_15397.html