CVD金刚石薄膜制备及其结构研究

摘要本课题利用热丝化学气相沉积法（HFCVD）在硅衬底上制备了两种不同硼掺杂浓度的金刚石薄膜，并通过沉积Ag叉指电极分别制备出两种不同硼掺杂浓度的金刚石紫外探测器。实验通过在氩气、700℃下退火1小时来实现探测器的欧姆接触，并对欧姆接触的探测器进行明暗电流-电压曲线测量和紫外光谱响应测试。测试结果表明，探测器的明暗电流电压曲线没有产生明显差异，探测器的响应度并未随硼掺杂浓度增加而增大，低掺杂浓度的金刚石薄膜制备出的紫外探测器在250nm处产生光响应，但响应强度较小，如何进一步提高特定波长下的响应度仍有待探究。32980
关键词硼掺杂金刚石热丝化学气相沉积光电探测器紫外光谱响应
毕业论文设计说明书外文摘要
Title CVD Preparation and Structure Characterization of Diamond Films
Abstract
We prepared two boron-doped diamond films with different concentrations on a silicon substrate by hot filament chemical vapor deposition (HFCVD).Two diamond UV detectors were derived by depositing Ag interdigital electrodes on these two boron-doped diamond films respectively, named D1,D2. The ohmic contact of the detector was realized by annealing these two devices in Ar at 700℃ for 1 hour. The I-V curves of the detectors under dark and UV illumination were measured respectively as well as the UV responsivity spectra. The results indicated that the I-V curves of the detectors under dark and UV illumination didn’t show significant differences, and the responsivity of the detectors didn’t increased with the boron dopant concentration. Diamond UV detector with a low dopant concentration show a slight responsivity at 250 nm illumination, how to further improve the responsivity under a specific wavelength is yet to be explored.
Keywords boron-doped diamond HFCVD photodetectors UV responsivity
目   次
1 绪论   1
1.1 金刚石简介   1
1.2 金刚石薄膜的性能及应用   2
1.2.1 金刚石薄膜的力学、声学性能及其应用   3
1.2.2 金刚石薄膜的热学性能及其应用   3
1.2.3金刚石薄膜的光学性能及其应用   3
1.2.4金刚石薄膜的电学性能及其应用   3
1.3 CVD金刚石薄膜的制备技术   3
1.3.1 热丝辅助化学气相沉积法(HFCVD)   3
1.3.2 微波等离子CVD   3
1.3.3 等离子体射流(plasma jet)法   3
1.4   金刚石薄膜在光电探测领域的研究进展   3
1.4.1 金刚石薄膜用作光电探测器的优势   3
1.4.2金刚石薄膜紫外探测器性能提高方向   3
1.4.3 金刚石薄膜紫外探测器的不足   3
2 实验   3
2．1 硼掺杂纳米金刚石薄膜的制备   3
2.1.1 实验设备   3
2.1.2 薄膜预形核   3
2.1.3 薄膜沉积实验   3
2．2 金刚石紫外探测器的制备   3
2.2.1 电极制备   3
2.2.2 器件后处理   3
2．3 实验结果表征   3
2.3.1 扫描电子显微镜（SEM   3
2.3.2 光学显微镜   3
2.3.3 拉曼光谱（Raman Spectroscopy）   3 CVD金刚石薄膜制备及其结构研究:http://www.751com.cn/cailiao/lunwen_29798.html