摘要：晶体材料应用于许多领域，随着时代的发展，对晶体材料的需求也逐渐增加，所以人们不断地探索晶体的材料、生长方法。1982年，前苏联的科学家 A.A. Kaminsky 首先报道了掺 Nd3+的 LGS 晶体的激光性能以后， 人们开始探索掺杂 Nd3+的锗酸镓钙（Ca3Ga2Ge4O14，简称 CGG）型晶体的激光性能。同一家族中的锗酸镓锶（Sr3Ga2Ge4O14，简称 SGG）晶体熔点比LGS 低 100℃，有利于坩埚下降法生长。 坩埚下降法是通过把坩埚从炉内的高温区域下移到较低温度区域从而使熔体过冷结晶。采用坩埚下降法可以减少晶体原料组分的挥发，较易生长晶体。本课题采用坩埚下降法生长SGG晶体，研究 SGG晶体以及坩埚下降法的过程，对纯 SGG原料和掺杂Nd3+的 SGG原料进行 XRD测试和光谱测试，并进行对比。36054
毕业论文关键字： 锗酸镓锶；坩埚下降法；晶体生长
Growth of doped Sr3Ga2Ge4O14 crystals by a modifiedBridgman method
Abstract：Crystal materials are used in many fields. With the development of thetimes, the demand for crystal materials is gradually increasing, so people explore thevariety of crystal and growth methods of the crystal constantly. In 1982,A.A.Kaminsky, a former Soviet Union scientist, was first reported to find the laserproperties of Nd: LGS crystal, people begin to explore Nd3+ doped in the crystals ofthe type of CGG type crystal and their laser performance. The melting point of SGGin the same family was 100℃ lower than that of LGS, which was beneficial for theBridgman method. The Bridgman method is to lower the temperature from thefurnace to the lower temperature region so as to crystallize the melt. The evaporationof some components of raw material can be reduced by using the Bridgman method ,and the crystal can be grown more easily. In This study, the Bridgman method used togrow the SGG crystal, and the process of the growth of SGG crystal will beresearched. Besides, XRD test will be performed to examine the phase structure ofpure SGG powder and Nd:SGG powder, and the laser spectrum of those two will alsobe tested and be compared.
KeyWords: SGG; the Bridgman method; crystal growth
目录
1.绪论.1
2.SGG的晶体研究进展2
2.1.SGG的结构2
2.2.SGG的性能3
2.2.1.光学性能.3
2.2.2.压电性能.3
2.2.3.热膨胀系数.4
2.2.4.硬度.4
2.3.晶体生长与缺陷4
2.3.1.晶体生长.4
2.3.2.缺陷.5
2.4.掺杂SGG晶体6
3.实验.8
3.1.SGG原料制备8
3.1.1.SGG测试原料制备.8
3.1.2.SGG生长原料制备.11
3.2.生长纯SGG晶体11
3.2.1.籽晶加工.11
3.2.2.晶体生长.13
3.3.掺杂SGG晶体生长16
3.3.1.Nd:SGG粉体制备.16
3.3.2.Nd:SGG晶体生长.18
4.结果与讨论.19
4.1.一步法原料XRD衍射分析19
4.2.二步法原料XRD衍射分析20
4.3.1%，2%，5%Nd：SGG粉体的XRD衍射分析.21
4.4.晶体生长结果22
4.5.掺杂SGG粉体发射光谱24
4.6.掺杂SGG粉体的吸收光谱25
5.结论.26
致谢27
参考文献28
1. 绪论晶体材料可应用于微电子、光电子、通信、照明、航空航天等众多领域，对于国防建设和国民经济有着极其重要的作用，集成电路、半导体照明、太阳能、现代通信、激光等领域都是在各类晶体材料的基础上发展起来的。由于应用领域不断有新的理论和技术的突破，对晶体材料不断提出更高的要求，如晶体材料的尺寸、性能、成本等，所以人们通过改善生长工艺、掺杂等手段对晶体材料的性能进行优化和提高，研制出成本更低、性能更优、尺寸更大的晶体材料。伴随基础学科的发展、新材料的不断发现和生长技术的不断提高，晶体工艺学已逐渐成为一门独立的分支学科。锗酸镓钙（Ca3Ga2Ge4O14，简称 CGG）晶体属三方晶系，点群32，空间群P321。 掺杂SGG晶体的生长+文献综述:http://www.751com.cn/cailiao/lunwen_34362.html