摘要磁控形状记忆合金在许多领域中都有着重要的应用，但目前对NiMnGa合金的研究尚不透彻。因此，本文通过X射线衍射仪（XRD）、原子力显微镜（AFM）和扫描电镜（SEM）对不同条件下制备的NiMnGa薄膜样品进行研究，得到以下结论：60606

1.在一定温度下溅射一定的时间（如在Si衬底上873K溅射45min以上）才能得到晶态薄膜，否则得到的薄膜就是非晶态的，无奥氏体马氏体双相结构，随着溅射时间增长，晶粒会慢慢长大，溅射时间的增长是一个晶粒长大的过程。

2.Ar工作气压对薄膜的晶体结构并无影响，0.2-0.6Pa的Ar工作气压下制得薄膜都是马氏体奥氏体双相组织。

3.溅射衬底对薄膜结构有着重大的影响，Ar气压0.2Pa，室温下溅射45min的条件下制得薄膜在不经过热处理时，MgO衬底能得到晶体薄膜，而Si衬底却不能。

4.薄膜在退火之前是非晶态，退火之后可得到晶态薄膜。

毕业论文关键词  Heusler合金；NiMnGa薄膜；相结构；表面形貌 

毕业设计说明书（论文）外文摘要

Title    Preparation and characterization of NiMnGa thin films prepared by magnetron sputtering                         

Abstract

Magnetic shape memory alloy has important applications in many fields, but currently the study of NiMnGa alloys is not clear. In this article，we use Magnetron sputtering apparatus to make Ni-Mn-Ga films. We use XRD ,AFM ,SEM technology to observe the metallogaphic structure and surface morphology of the films.

1. Under a certain temperature sputtering a certain amount of time (such as 873 (k) on Si substrate sputtering above 45 min) can be transformed film and or get thin films are amorphous, no martensite dual phase structure of austenite, as the sputtering time growth, grain will slowly grow up, the growth of the sputtering time is a process of grain growth. 

2. Ar work pressure no effect on the crystal structure of thin film, Ar work under the pressure of 0.2 to 0.6 Pa film is martensite was austenitic bipolar organisation. 

3. The sputtering substrate has a significant impact on membrane structure, the Ar pressure 0.2 Pa, sputtering for 45 min at room temperature under the condition of thin film was when without heat treatment, can get crystal MgO style substrate film, not the Si substrate. 

4. Thin films are crystallized before annealing, after annealing is amorphous, shows that annealing heat treatment can make the amorphous thin film crystallization. 

Keywords  Heusler alloy, NiMnGa film, metallogaphic structure, surface morphology

目   录

1.绪论 1

1.1引言 1

1.2 Heusler合金简介 2

1.3 Ni-Mn-Ga合金马氏体相变 3

1.4 影响NiMnGa薄膜基本物理参数的因素 4

1.5 Ni-Mn-Ga合金的研究现状 5

1.6选题目的与研究内容 5

2样品制备与表征方法 7

2.1样品制备 7

2.2样品的表征方法 8

3 实验数据与结果分析 11

3.1 溅射时间与溅射温度的影响 11

3.2 溅射气压的影响 15

3.3 溅射衬底的影响 16

3.4后续热处理的影响 18 NiMnGa薄膜的磁控溅射制备与表征:http://www.751com.cn/cailiao/lunwen_66119.html