摘要在后摩尔时代，晶体管的特征尺寸不断减小，在带来集成度的提高的同时，也导致了一系列制造和性能方面的问题。现有的工艺水平已经达到了硅材料的极限，因此我们需要发现新的材料以推动微电子产业的继续发展，二文晶体材料是目前最为热门也最有希望替代传统硅材料的一种新型材料。28468
本文以机械剥离法制备了二文材料，并进行了二文材料场效应晶体管的制备。首先进行了微机械剥离法制备单层或少层硫化钼和锑烯的实验，探讨了微机械剥离法的适用条件与合适工艺。然后分别进行了以二文硫化钼和锑烯为沟道的场效应晶体管的制备与表征，使用了光刻、真空蒸镀等工艺，探讨了合适的工艺条件。并以电学表征的数据计算了二文硫化钼的电子迁移率。
关键词  二文材料  硫化钼  锑烯   场效应晶体管
毕业论文设计说明书外文摘要
Title   Field-Effect Transistor Based on two-dimensional Sb atomic crystal                                                  
Abstract
In the past-Moore era, the decreasing of the transistors feature size not only leads to the improvement of integration, but also results in a series of problems in manufacture and performance. The state-of-the-art IC technology will soon reached the fundamental limit of silicon, so we need to find new materials to promote the continued development of the microelectronics industry. The two-dimensional crystalline material is the most popular and most promising new material to take place of conventional silicon.
In this paper, two-dimensional material made by mechanical strip method and two-dimensional material field effect transistors were prepared.
I prepared single layer or few layers MoS2 and antimonene by micro mechanical strip, and discussed the optimized fabrication conditions and suitable process. The preparation and characterization of two-dimensional MoS2 and antimonene field effect transistors were conducted, using photolithography,  vacuum deposition and other processes, The proper process conditions have been discussed.Electrical properties of MoS2 transistor was measured to calculate the electron mobility of two-dimensional MoS2.
Keywords  two-dimensional material  MoS2  antimonene   transistors
目   次
1绪论 1
1.1二文材料的发展1
1.1.1石墨烯1
1.1.2二硫化钼2
1.1.3黑磷4
1.1.4锑4
1.2二文晶体材料的常用制备方法4
1.2.1微机械剥离法4
1.2.2液相剥离法5
1.2.3 化学气相沉积5
1.2.4化学剥离法5
1.2.5分子束外延5
1.3场效应晶体管的结构与制备工艺6
2实验方法 8
2.1 材料制备  8
2.1.1微机械剥离法  8
2.2 器件制备9
2.2.1光刻9
2.2.2电极蒸镀10
2.3器件表征11
3实验结果分析13
3.1硫化钼13
3.2锑17
结论 18
致谢  19
参考文献20
1    绪论
随着微电子领域制造技术的不断发展，特征尺寸不断减小。下一代硅集成电路的特征尺寸将达到15nm甚至10nm以下。但是特征尺寸减小在带来集成提高，设备体积减小等优势以外，还带来一系列制造上的困难。短沟道效应和隧穿效应对集成电路稳定性的影响，使得特征尺寸10nm以下集成电路的制造十分困难1。因此集成电路的进一步发展需要新型材料及其加工工艺的发展来突破特征尺寸减小所遇到的瓶颈，二文晶体材料就是后摩尔时代电子制造材料最有希望的候选者之一。 基于二维锑原子晶体的场效应晶体管:http://www.751com.cn/cailiao/lunwen_23314.html