摘要有机-无机铅卤钙钛矿材料由于具有优异的光学、电学性能而被广泛关注。但因含有对环境不利的铅元素，应用空间大大受限。最近，有报道将铋基钙钛矿应用到太阳能电池领域，尽管其电池转换效率低于传统的铅基钙钛矿电池，但稳定性高、环境友好，显示出了极强的潜力。鉴于其优良的电学性能，我们设想其在电子存储领域也会有应用前景。然而，到目前为止基于这类材料的忆阻器并无报道。 在本次实验中，我们通过常温液相法分别制备了两类少铅以及无铅的钙钛矿薄膜材料并测试了其阻变性能。结果显示，这两类材料均具有相似的双极性阻抗特性。其中，基于Cs3Bi2I9钙钛矿薄膜的柔性存储单元不仅显示出较低的操作电压、较高的循环使用特性，而且具备优异的机械韧性。  48079

毕业论文关键词   有机无机金属杂化卤素钙钛矿  忆阻器  液相沉积法  双极性阻抗转变  

Title  Synthesis and resistance switching behaviors of metal halide perovskite materials                                           

Abstract In  recent  years,  hybrid organic−inorganic metal halide perovskites have attracted rapidly increasing research interests owing to their excellent properties such as  highly  tunable bandgap, unique ambipolar charger transport, and very long charge carrier diffusion lengths.  In particularly, the performances of lead  halide perovskites applied in high-efficiency thin film solar cells have demonstrated great promising. However, the mass application of this kind of perovskites is limited by the  toxic  heavy-metal element  Pb. Therefore, it is necessary to develop lead-free perovskites for the further applications. Recently, solar cells based on bismuth  halide  perovskites have been  reported. These  Bi-based  halide perovskite solar cells were much less toxic and more stable in air, although the power conversion efficiencies were lower than  the conventional  Pb-based halide perovskites  solar cells.  We are thus  motived to develop a series of Bi-based  halide perovskites and extend their applications in  electronic devices, such like resistive random access memory devices (RRAMs). To our best knowledge, there is no research has yet been reported on the studies of RRAMs based on these Bi-based halide perovskites. In this work, we have prepared two series of perovskite materials CH3NH3Pb1−xBixI3 (0 x 1) and A3Bi2I9 (A= MA+, Cs+) by employed solution synthesis methods and characterization their resistance switching behaviors in the RRAMs. We found that the memory cells based on these Bi-based halide perovskites all have similar bipolar resistance switching performances. In particular, the Cs3Bi2I9 based RRAM demonstrated excellent resistance switching performance, such as low operating voltage, stable cycle performance and bending durability.  

Keywords   Hybrid organic−inorganic metal halide perovskites  RRAMs  Solution synthesis methods  Bipolar resistance switching behavior   

目次

1引言.1

1.1电驱动阻抗转变存储器发展现状.2

1.2选题目的与研究内容11

2实验13

2.1实验原料13

2.2实验仪器14

2.3液相法制备钙钛矿薄膜15

2.4忆阻器存储单元制备16

2.5性能表征16

3结果讨论与分析19

3.1CH3NH3Pb1−xBixI3系列钙钛矿薄膜的制备及性能表征.19

3.2A3Bi2I9体系钙钛矿薄膜的制备及性能表征24

结论.33

致谢.34

参考文献.35 金属卤化物钙钛矿材料的合成及阻变行为研究:http://www.751com.cn/cailiao/lunwen_50419.html