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摘要氧化钼材料具有良好的光、电性能，在大屏幕信息显示等领域有着广泛的应用。本文采用脉冲激光沉积（PLD）法制备了MoO3薄膜，通过XRD、Raman和SEM等表征手段对样品进行了表征，研究了工艺参数对薄膜的表面形貌、微观结构和结晶质量的影响。67781
在衬底温度为350℃时，随着氧压增加，薄膜由非晶结构转变为晶体结构，并且在一定范围内薄膜随氧压增加而变得致密均匀，由细长的线状向圆润的棒状转变，结晶质量提高。
在氧压为20mtorr，温度为200℃时薄膜几乎为非晶结构，随着温度升高出现结晶，晶粒大小也随之增加，变得致密均匀，但温度的升高没有影响晶粒的择优取向，即沿着（0k0）方向择优生长。400℃时微晶尺寸最大，质量最佳，在500℃时出现MoO2正交结构。
毕业论文关键词 MoO3薄膜 脉冲激光沉积法 表面形貌 微观结构
毕业设计说明书（论文）外文摘要
Title The deposition and microstructure of MoO3 film
Abstract
MoO3 material has been widely used in large screen display of information etc due to its excellent optical and electrical property. In this paper, MoO3 films were prepared by pulsed laser deposition(PLD). The samples were characterized by the XRD, Raman and SEM. The influence of process parameters on the surface morphology, microstructure and crystalline quality of MoO3 film were investigated.
When the substrate temperature is 350℃, the MoO3 film changed from amorphous structure into the crystal structure with increasing oxygen pressure. With the increase of oxygen pressure, the crystallization of the deposited films became compact and uniform in a certain range. The grain shape changed from the slender rod into a rounded rod, and the crystal quality improved.
When the temperature is 200℃, the films were almost amorphous structure. The grain size of MoO3 films increased with the increasing temperature at the oxygen pressure of 20 mtorr, and it becomes compact and uniform. The deposited film exhibited (0k0) preferential orientation, and there was almost no effect of substrate temperature on the orientation. When the MoO3 film deposited at 400 ℃,the film demonstrated the largest crystallite size and best quality. MoO2 orthorhombic structure occurred at 500 ℃.
Keywords MoO3 film, pulsed laser deposition(PLD), surface morphology, microstructure.
目次
1 绪论 1
1.1 MoO3的结构 1
1.2 MoO3的基本性质 1
1.3 MoO3薄膜的制备方法 3
1.4 MoO3的应用 5
2 实验 7
2.1 脉冲激光沉积原理 7
2.2 脉冲激光沉积系统 8
2.3 薄膜具体制备工艺 8
3 结果分析与讨论 11
3.1 衬底温度对MoO3薄膜表面形貌与微观结构的影响 11
3.2 氧压对MoO3薄膜表面形貌与微观结构的影响 15
3.3 能量密度对MoO3薄膜表面形貌与微观结构的影响 17
结论 21
致谢 22
参考文献 23