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摘要MgZnO 半导体薄膜作为一种原料来源广泛，价格低廉，无毒无害的新型 光电材料，通过实现禁带宽度的连续可调，使其作为一种宽带隙材料受到了大 家的关注。人们通过改变 Mg 的含量、溅射功率等一系列因素来实现 MgZnO 薄膜的禁带宽度在一定范围内连续可调，从而制备得到广泛适用于蓝光至紫外 光谱区域的发光器件，使得其运用越来越广泛。本实验采用了射频磁控溅射法 通过改变溅射功率和氩氧比成功的在硅片和玻璃衬底上沉积了非晶 MgZnO 薄 膜，并通过 XRD、SEM、PL 和透过率的检测手段对薄膜的结构和光学特性进 行了分析。非晶 MgZnO 薄膜表面平整光滑，结晶性差，在不同溅射功率作用 下的峰位变化很小，为近紫外发光，氩氧比的改变使得 Mg 没有与衬底很好的 结合，薄膜在可见光范围内具有很高的透过率，溅射功率的变化使得其带隙逐 渐往紫外区变化。68479
毕业论文关键词 非晶 MgZnO 薄膜 结构性能 光学性能
Title Preparation and Photodetector research of MgZnO films
Abstract
MgZnO semiconductor films have absorbed much attention as a kind of new photovoltaic materials for wide band gap, broad sources of raw materials, low price and nontoxic by implementing adjustable band gap continuously. The band gap of MgZnO films has been achieved adjustable continuously within a certain range by varying the content of Mg,the sputtering power and other factors. As a result,the light-emitting device has been prepared which was widely used in Blu-ray to ultraviolet spectrum region to make its use more widely. By controlling sputtering power and argon oxygen ratio, RF magnetron sputtering has been used to deposit amorphous MgZnO thin film on silicon and glass substrates. The structure and optical properties of the films were analyzed through detection means of XRD, SEM, PL and transmittance. Experimental results show that amorphous MgZnO films have smooth surface and poor crystallinity. There is little change in position of the peak at different sputtering power and it is near ultraviolet light-emitting. The change in the ratio of argon-oxygen can not make Mg have a good combination with the substrate. The film has a high transmittance in the visible range and the change of the sputtering power makes its band gap gradually change to the ultraviolet region.
Keywords amorphous MgZnO films structural characteristics optical properties
目录
1 引言 1
1.1 MgZnO 薄膜的制备方法 1
1.2 磁控溅射中 MgZnO 薄膜性能的影响因素 3
1.3 MgZnO 光电探测器存在的主要问题和发展趋势 4
1.4 MgZnO 薄膜的研究进展 4
1.5 本课题的研究内容 5
2 MgZnO 薄膜的制备及流程 6
2.1 磁控溅射设备 6
2.2 试验参数 7
2.3 样品制备流程及注意事项 7
2.4 样品的分析与表征方法
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