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摘要本文将研究1064nm毫秒激光与硅PIN光电二极管相互作用过程。利用COMSOL Multiphysics 仿真软件建立二维轴对称数值模型。采用有限元方法，得到了瞬态温度场。进而得到了毫秒激光与硅PIN光电二极管器件材料相互作用时，中心点的温度随时间变化以及辐照结束时，沿径向和轴向方向的温度分布。结果表明，光吸收系数和热传导率是温度场演化的两个主导因素。得到了熔融损伤阈值，气化损伤阈值。同时由于硅的热熔融，会导致掺杂离子浓度的重分布。在温度场的基础上，进一步模拟了掺杂离子重分布过程。发现硼在液体介质中的扩散和在耗尽区的硅的快速结晶产生的缺陷是毫秒激光致使硅PIN光电二极管电性能下降的两个主要原因。搭建了1064nm毫秒激光损伤硅PIN光电二极管的实验平台，得到不同激光能量下的BPW34的损伤形貌图，并测量其暗电流和光电流、响应度。综合数值结果和实验结果，分析了损伤机理。67767
毕业论文关键词 毫秒激光 温度场 掺杂离子重分布 有限元 硅PIN光电二极管
毕业设计说明书（论文）外文摘要
Title Researches on the thermal interaction between millisecond laser and silicon-based PIN photodiode and the damage of sillicon-based PIN photodiode indused by millisecond laser
Abstract This article researches the process between sillicon-based PIN photodiode and 1064nm millisecond laser. A 2D axisymmetric mathematical model is established by using COMSOL Multiphysics software. The transient temperature fields are obtained by using the finite element method. Then I obtain the temperature change over time at the center of laser irradiation under different laser energy and the temperature distribution along the radial direction and along the axial direction on the top surface at the end of laser irradiation. The results indicate that the optical absorption coefficient and the thermal conductivity are the two key factors for the temperature evolution. Then the morphological damage threshold and vaporization damage threshold are obtained. At the same time, Because the thermal melting of the silicon leads the redistribution of the concentration of dopant ions. Simulating the process of the redistribution of dopant ions is based on temperature fields. The diffusion of boron in the liquid phase and the introduction of deep-level defects in the depletion region of the photodiode are the two reasons for the millisecond laser-induced electrical degradation of sillicon-based PIN photodiode. Subsequently, the images of the damage morphology of BPW34 under different laser energy are obtained by building an experimental platform of 1064nm millisecond damage in silicon-based PIN photodiode. laser-induced. Then I measured the dark current, light current and responsibility. Finally, this passage analyzes the damage mechanism from the datas including the numerical results and experimental results.
Keywords Millisecond Laser Temperature Field Redistribution of Dopant Ions FEM Sillicon-based PIN Photodiode
目 次
1 引言 1
1.1 激光与光电探测器相互作用的研究现状 1
1.2 本文研究的主要工作 3
2 毫秒激光辐照PIN光电二极管产生瞬态温度场的数值模拟 4
2.1 热传学 4
2.2 PIN温度场计算的有限元方法 6
2.3 温度场模拟结果 10
2.4 小结